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Now in its second edition, this updated, combined volume provides a survey of GaInAsP¿InP and GaInAsP¿GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. Coverage also includes discussion of electronic devices and an overview of optoelectronic integrated circuits (OEICs).
MOCVD is a widely used technique in research and industry. This book provides coverage of the MOCVD challenge. It presents a review of methods for producing ultra thin, accurately controlled epitaxial layers of semiconductor multilayers and microstructures deposited over a large range of substrates.
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