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Scanning Nonlinear Dielectric Microscopy: Investigation of Ferroelectric, Dielectric, and Semiconductor Materials and Devices is the definitive reference on an important tool to characterize ferroelectric, dielectric and semiconductor materials. Written by the inventor, the book reviews the methods for applying the technique to key materials applications, including the measurement of ferroelectric materials at the atomic scale and the visualization and measurement of semiconductor materials and devices at a high level of sensitivity. Finally, the book reviews new insights this technique has given to material and device physics in ferroelectric and semiconductor materials. The book is appropriate for those involved in the development of ferroelectric, dielectric and semiconductor materials devices in academia and industry. Presents an in-depth look at the SNDM materials characterization technique by its inventorReviews key materials applications, such as measurement of ferroelectric materials at the nanoscale and measurement of semiconductor materials and devicesAnalyzes key insights on semiconductor materials and device physics derived from the SNDM technique
Microbolometers: Fundamentals, Materials, and Recent Developments describes the fundamentals of microbolometers, their historic evolution, operational principles and material choices. It also explains the impact of materials on the processing and development of device characteristics. Sections address various aspects of optical properties and recommend models of properties of materials of interest for the fabrication of the uncooled microbolometers. In addition, the book presents two case studies, Honeywell and Texas Instruments, that focus on the design and manufacture of microbolometers. Finally, recent developments, applications, patents and future trends are presented. The chapter on patents will summarize the strengths and weaknesses of each of the technologies. "Please note that there is an error on the Dedication page, it should read: "To my sister, Math. G.Y. Premalatha, and my brother-in-law, the late Professor G.N. Yoganarasimhan, Professor of Water Resources Engineering and Management, for showing me the direction” Describes the fundamentals of uncooled infrared detectors, operational principles and material approaches Includes case studies based on Honeywell and Texas Instruments'' work on microbolometers Provides analyses of current patents with a look towards their strengths and weaknesses
This text for advanced undergraduates reading electrical engineering, applied mathematics, and branches of computer science involved with signal processing (speech synthesis, computer vision and robotics) also serves as a reference source in academia and industry.
This textbook provides a complete guide to the design, procurement, installation and testing procedures for local area networks (LANs) using both copper and optical fibre. International, European and American LAN and premises cabling standards are explained and compared including the latest Category 5, Category 6 and Category 7 proposals.
Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applicationsAddresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliabilityProvides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
The directed self-assembly (DSA) method of patterning for microelectronics uses polymer phase-separation to generate features of less than 20nm, with the positions of self-assembling materials externally guided into the desired pattern. Directed self-assembly of Block Co-polymers for Nano-manufacturing reviews the design, production, applications and future developments needed to facilitate the widescale adoption of this promising technology. Beginning with a solid overview of the physics and chemistry of block copolymer (BCP) materials, Part 1 covers the synthesis of new materials and new processing methods for DSA. Part 2 then goes on to outline the key modelling and characterization principles of DSA, reviewing templates and patterning using topographical and chemically modified surfaces, line edge roughness and dimensional control, x-ray scattering for characterization, and nanoscale driven assembly. Finally, Part 3 discusses application areas and related issues for DSA in nano-manufacturing, including for basic logic circuit design, the inverse DSA problem, design decomposition and the modelling and analysis of large scale, template self-assembly manufacturing techniques.
Magnetic nanowires and microwires are key tools in the development of enhanced devices for information technology (memory and data processing) and sensing. Offering the combined characteristics of high density, high speed, and non-volatility, they facilitate reliable control of the motion of magnetic domain walls; a key requirement for the development of novel classes of logic and storage devices. Part One introduces the design and synthesis of magnetic nanowires and microwires, reviewing the growth and processing of nanowires and nanowire heterostructures using such methods as sol-gel and electrodeposition combinations, focused-electron/ion-beam-induced deposition, chemical vapour transport, quenching and drawing and magnetic interactions. Magnetic and transport properties, alongside domain walls, in nano- and microwires are then explored in Part Two, before Part Three goes on to explore a wide range of applications for magnetic nano- and microwire devices, including memory, microwave and electrochemical applications, in addition to thermal spin polarization and configuration, magnetocalorific effects and Bloch point dynamics. Detailed coverage of multiple key techniques for the growth and processing of nanowires and microwiresReviews the principles and difficulties involved in applying magnetic nano- and microwires to a wide range of applicationsCombines the expertise of specialists from around the globe to give a broad overview of current and future trends
The first part of the book gives the reader a summary of the theory behind magnetoelectric phenomena, it then introduces magnetoelectric materials and structures and the techniques used to fabricate and characterise them. Part two looks at magnetoelectric devices.
Part one covers modeling techniques incorporating quantum mechanical effects to simulate nanomaterials and devices. Part two describes the characterization of nanomaterials using diffraction techniques and Raman spectroscopy. Part three looks at the structure and properties of nanomaterials. Part four explores nanofabrication and nanodevices.
Part one covers architectures for VCS, part two describes the physical layer, antenna technologies and propagation models, part three explores protocols, algorithms, routing and information dissemination and part four looks at the operation and deployment of vehicular communications and networks.
Failure of electronic packaging: Effects of temperature, moisture and mechanical driving forces provides a thorough review of this important field of research.
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