Books in the Woodhead Publishing Series in Electronic and Optical Materials series

Part one covers architectures for VCS, part two describes the physical layer, antenna technologies and propagation models, part three explores protocols, algorithms, routing and information dissemination and part four looks at the operation and deployment of vehicular communications and networks.

Photo-Electroactive Non-Volatile Memories for Data Storage and Neuromorphic Computing summarizes advances in the development of photo-electroactive memories and neuromorphic computing systems, suggests possible solutions to the challenges of device design, and evaluates the prospects for commercial applications. Sections covers developments in electro-photoactive memory, and photonic neuromorphic and in-memory computing, including discussions on design concepts, operation principles and basic storage mechanism of optoelectronic memory devices, potential materials from organic molecules,  semiconductor quantum dots to two-dimensional materials with desirable electrical and optical properties, device challenges, and possible strategies.  This comprehensive, accessible and up-to-date book will be of particular interest to graduate students and researchers in solid-state electronics. It is an invaluable systematic introduction to the memory characteristics, operation principles and storage mechanisms of the latest reported electro-photoactive memory devices. Reviews the most promising materials to enable emerging computing memory and data storage devices, including one- and two-dimensional materials, metal oxides, semiconductors, organic materials, and moreDiscusses fundamental mechanisms and design strategies for two- and three-terminal device structuresAddresses device challenges and strategies to enable translation of optical and optoelectronic technologies

Scanning Nonlinear Dielectric Microscopy: Investigation of Ferroelectric, Dielectric, and Semiconductor Materials and Devices is the definitive reference on an important tool to characterize ferroelectric, dielectric and semiconductor materials. Written by the inventor, the book reviews the methods for applying the technique to key materials applications, including the measurement of ferroelectric materials at the atomic scale and the visualization and measurement of semiconductor materials and devices at a high level of sensitivity. Finally, the book reviews new insights this technique has given to material and device physics in ferroelectric and semiconductor materials. The book is appropriate for those involved in the development of ferroelectric, dielectric and semiconductor materials devices in academia and industry. Presents an in-depth look at the SNDM materials characterization technique by its inventorReviews key materials applications, such as measurement of ferroelectric materials at the nanoscale and measurement of semiconductor materials and devicesAnalyzes key insights on semiconductor materials and device physics derived from the SNDM technique

Spectroscopy of Lanthanide Doped Oxide Materials provides a comprehensive overview on the most essential characterization techniques of these materials, along with their key applications. The book describes the application of optical spectroscopy of lanthanides doped inorganic phosphor hosts and gives information about their structure and morphology, binding energies, energy of transition and band gap. Also discussed are the properties and applications of rare earth doped inorganic materials and the barriers and potential solutions to enable the commercial realization of phosphors in important applications. The book reviews key information for those entering the field of phosphor research, along with the fundamental knowledge of the properties of transition series elements under UV/Visible/NIR light exposer. Low-cost materials methods to synthesize the materials and spectroscopic characterization methods are also detailed.Reviews the barriers and potential solutions to enable commercial realization of inorganic phosphorsDiscusses low-cost material methods to synthesize and characterize lanthanide doped oxide materialsProvides readers with a comprehensive overview on key properties for the most relevant applications, such as lighting and display, energy conversion and solar cell devices

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized.Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devicesConsiders potential applications including FeCaps, FeFETs, NCFETs, FTJs and moreProvides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model. Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the modelExplains the complex operation of the FDSOI device and its use of two independent control inputsAddresses the parameter extraction challenges for those using this model

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applicationsAddresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliabilityProvides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more.Presents the latest research and most comprehensive overview of both standard and novel semiconductorsProvides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issuesTakes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond

Wireless MEMS Networks and Applications reviews key emerging applications of MEMS in wireless and mobile networks. This book covers the different types of wireless MEMS devices, also exploring MEMS in smartphones, tablets, and the MEMS used for energy harvesting. The book reviews the range of applications of wireless MEMS networks in manufacturing, infrastructure monitoring, environmental monitoring, space applications, agricultural monitoring for food safety, health applications, and systems for smart cities.