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Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

About Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.

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  • Language:
  • English
  • ISBN:
  • 9780367554156
  • Binding:
  • Paperback
  • Pages:
  • 130
  • Published:
  • September 25, 2023
  • Dimensions:
  • 156x8x234 mm.
  • Weight:
  • 213 g.
Delivery: 1-2 weeks
Expected delivery: October 13, 2024

Description of Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

This book characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. It explains different types of device architectures available to enhance the performance including InAs based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs based SG and DG-HEMT is also discussed.

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