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Contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. This title provides an overview and a coverage of research results across the field.
Multinary compounds are used in a wide range of devices, including photovoltaic solar cells, light emitters and detectors, and piezoelectric actuators. This book focuses on optoelectronic properties, electronic band structure, charge carrier transport, optical and magnetic properties, and superconductivity.
Explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, and silicon carbide. This work assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices.
Offers an overview of the advances in the field of ionization by electron and photon impact. This book contains 18 contributions of experimental, theoretical, and computational work on correlated processes that involve a wide range of targets, including atoms, molecules, clusters, and surfaces.
Held every three years, The International Symposia on the Science and Technology of Light Sources (LS) provide a forum for the international community of engineers, scientists, and academia from the lighting industry. This work features leaders in their respective fields who discuss the findings and developments in light source research.
Presents an overview of techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This book addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. It investigates defects in layers and devices.
Offers a presentation in several areas of NGS research, including materials, growth and characterization, fundamental physical phenomena, and devices and applications. This work examines the novel material of InAs and its related alloys, heterostructures, and nanostructures as well as more traditional NGS materials such as InSb, PbTe, and HgCdTe.
Presents an overview and reference material on x-ray lasers. This work covers topics such as: collisional x-ray lasers, table-top x-ray lasers, beam optics, x-ray optics, OFI and photo-pumped schemes, capillary schemes, international laser facilities, XUV nonlinear mixing, alternative soft x-ray sources, diagnostics, and applications.
Presents an overview of advances in semiconductor studies using microscopy. This book explores the use of transmission and scanning electron microscopy, ultra fine electron probes, and EELS to investigate semi conducting structures. It is suitable for academics and researchers in materials science, and electrical and electronic engineering.
Presents an overview of developments in compound semiconductor physics and its technological applications to devices. This work reflects the progress achieved in understanding and mastering compound semiconductor materials and optoelectronic devices. It covers heteroepitaxial growth, quantum wires and dots, and ultrafast transistors.
Offers an overview of international research in the field of ionization by electron and photon impact. This work covers nuclear reactions and interaction of electrons, photons, and ions with biological matter. It is suitable for researchers working in atomic and molecular physics, surface science, chemistry, and biophysics.
Offers an overview of the state of the art in computational accelerator physics, based on papers presented at the seventh international conference at Michigan State University in October 2002. This book discusses modern computational environments, including parallel clusters, visualization, and new programming paradigms.
Offers coverage on applications of electrostatics in various areas of physics and technology. This work also presents research and developments in electrostatics. It provides an overview of the advances in electrostatics, covering areas such as instrumentation design; numerical modeling; and, electrostatics hazards.
Constitutes the 26th International Conference on the Physics of Semiconductors that was held from 29 July to 2 August 2002 at the Edinburgh International Conference Centre. This work provides an international perspective on the research and a review of developments in semiconductor physics.
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