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With the dawn of Gallium Oxide (Ga2OΓéâ) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream.Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field — newcomers and experienced alike.This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2OΓéâand diamond.
In this review volume, the editors have included the state-of-the-art research and development in nano composites, and optical electronics written by experts in the field. In addition, it also covers applications for emerging technologies in High-Speed Electronics.In summary, topics covered in this volume includes various aspects of high performance materials and devices for implementing High-Speed Electronic systems.
In this volume, we have put together papers spanning a broad range - from the area of modeling of strain and misfit dislocation densities, microwave absorption characteristics of nanocomposites, to X-ray diffraction studies.Specific topics in this volume include: Modeling of strain relaxation and defect dynamics in buffer layers for semiconductor devices fabricated on lattice-mismatched substrates, which enables technology for advanced computer chips, multi-junction solar cells, detectors, and microwave transistors. Physical Unclonable Functions (PUFs) are probabilistic circuit primitives that extract randomness from the physical characteristics of devices. One of the papers outlines PUF design based on resistor and capacitor variations for low pass filters (LoPUF). Spatial wavefunction switching (SWS) FETs, which can process 2-bits per FET using CMOS-SWS logic, thus enabling multivalued logic (MVL) and compact DRAMs. Perimeter gated single-photon avalanche diode (PGSPAD). The applied voltage at the gate terminal modulates the electric field, making it uniform throughout the junction. This gating technique is an efficient method to prevent premature edge breakdown, one of the major problems in operating avalanche photodiodes implemented in CMOS process.In summary, papers selected in this volume cover various aspects of high performance logic and circuits for high-speed electronic systems.
This volume provides summaries on many aspects of advanced semiconductor heterostructures and highlights the great variety of heterostructures that has emerged since their original conception. The text illustrates that an astounding variety of heterostructures can be fabricated with technology.
Surface acoustic wave (SAW) devices are recognized for their versatility and efficiency in controlling and processing electrical signals. This text, together with Volume 2, presents an overview of advances in SAW technology, systems and applications by researchers in the field.
This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. It includes consideration of the role of acoustical and optical phonons in quantum structures.
The field of nanotubes and nanowires is evolving, with potential applications in electronics, optics, and sensors. This work summarises our understanding of these materials systems, as well as some of these potential applications. It is aimed at materials scientists, and students interested in keeping abreast of the developments in nanotechnology.
Provides information about the fundamental and applied research areas that support US Army applications. This work features research papers which address main theme of the conference, "Transformational Science and Technology for the Current and Future Force," emphasizing the role of science and technology in winning the global war on terrorism.
Presents the perspectives on the development in multispectral/hyperspectral techniques for early-warning monitoring against chemical, biological and radiological (CB&R) contamination of surface and air environments through the presentation of a survey of the novel spectroscopic methodologies to address the CB&R defense and security challenges.
Explores radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. This book considers the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results.
Suitable for device and electronics engineers and scientists, this work covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices.
Contains the selected best papers presented at the Workshop on Frontiers in Electronics (WOFE-07). This book is divided into four distinct sections, with the common denominator throughout being the nano-device, present under various metamorphoses in the wide CMOS and optoelectronics arena.
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