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About Radiation Defect Engineering

Explores radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. This book considers the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results.

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  • Language:
  • English
  • ISBN:
  • 9789812565211
  • Binding:
  • Hardback
  • Pages:
  • 264
  • Published:
  • November 20, 2005
  • Dimensions:
  • 167x254x22 mm.
  • Weight:
  • 706 g.
Delivery: 2-4 weeks
Expected delivery: April 5, 2025

Description of Radiation Defect Engineering

Explores radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. This book considers the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results.

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