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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

About Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

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  • Language:
  • English
  • ISBN:
  • 9780127521466
  • Binding:
  • Hardback
  • Pages:
  • 316
  • Published:
  • June 11, 1997
  • Dimensions:
  • 152x229x22 mm.
  • Weight:
  • 620 g.
Delivery: 2-3 weeks
Expected delivery: December 7, 2024

Description of Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

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