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Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions
part of the Springer Theses series
- Binding:
- Hardback
- Pages:
- 147
- Published:
- April 14, 2019
- Edition:
- 2019
- Dimensions:
- 155x235x0 mm.
- Weight:
- 454 g.
Delivery:
2-4 weeks
Expected delivery: May 16, 2025
Description of Electronic States of Narrow-Gap Semiconductors Under Multi-Extreme Conditions
This book discusses the latest investigations into the electronic structure of narrow-gap semiconductors in extreme conditions, and describes in detail magnetic field and pressure measurements using two high-quality single crystals: black phosphorus (BP) and lead telluride (PbTe). The book presents two significant findings for BP and PbTe.
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