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Fabrication and Physical Properties of Novel Two-dimensional Crystal Materials Beyond Graphene: Germanene, Hafnene and PtSe2

About Fabrication and Physical Properties of Novel Two-dimensional Crystal Materials Beyond Graphene: Germanene, Hafnene and PtSe2

This thesis reports on essential experimental work in the field of novel two-dimensional (2D) atomic crystals beyond graphene. It especially describes three new 2D crystal materials, namely germanene, hafnene, and monolayer PtSe2 fabricated experimentally for the first time, using an ultra-high vacuum molecular beam epitaxy (UHV-MBE) system. Multiple characterization techniques, including scanning tunneling microscope (STM), low energy electron diffraction (LEED), scanning transmission electron microscope (STEM), and angle-resolved photoemission spectroscopy (ARPES), combined with theoretical studies reveal the materials¿ atomic and electronic structures, which allows the author to further investigate their physical properties and potential applications. In addition, a new epitaxial growth method for transition metal dichalcogenides involving direct selenization of metal supports is developed. These studies represent a significant step forward in expanding the family of 2D crystal materials and exploring their application potentials in future nanotechnology and related areas.

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  • Language:
  • English
  • ISBN:
  • 9789811519628
  • Binding:
  • Hardback
  • Pages:
  • 58
  • Published:
  • January 29, 2020
  • Edition:
  • 12020
  • Dimensions:
  • 155x235x0 mm.
  • Weight:
  • 454 g.
Delivery: 2-3 weeks
Expected delivery: September 28, 2025

Description of Fabrication and Physical Properties of Novel Two-dimensional Crystal Materials Beyond Graphene: Germanene, Hafnene and PtSe2

This thesis reports on essential experimental work in the field of novel two-dimensional (2D) atomic crystals beyond graphene. It especially describes three new 2D crystal materials, namely germanene, hafnene, and monolayer PtSe2 fabricated experimentally for the first time, using an ultra-high vacuum molecular beam epitaxy (UHV-MBE) system.
Multiple characterization techniques, including scanning tunneling microscope (STM), low energy electron diffraction (LEED), scanning transmission electron microscope (STEM), and angle-resolved photoemission spectroscopy (ARPES), combined with theoretical studies reveal the materials¿ atomic and electronic structures, which allows the author to further investigate their physical properties and potential applications. In addition, a new epitaxial growth method for transition metal dichalcogenides involving direct selenization of metal supports is developed. These studies represent a significant step forward in expanding the family of 2D crystal materials and exploring their application potentials in future nanotechnology and related areas.

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