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Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses
part of the Springer Theses series
- Binding:
- Paperback
- Pages:
- 98
- Published:
- December 22, 2018
- Edition:
- 12018
- Dimensions:
- 155x235x7 mm.
- Weight:
- 454 g.
Delivery:
1-2 weeks
Expected delivery: April 13, 2025
Description of Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses
This thesis describes an investigation into homogeneous KN crystalline films grown on Pt/Ti/SiO2/Si substrates, amorphous KN films grown on TiN/Si substrates using the RF-sputtering method, and the ferroelectic and piezoelectric properties of these KN films.
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