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Fundamentals of Silicon Carbide Technology

- Growth, Characterization, Devices and Applications

part of the Wiley - IEEE series

About Fundamentals of Silicon Carbide Technology

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.

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  • Language:
  • English
  • ISBN:
  • 9781118313527
  • Binding:
  • Hardback
  • Pages:
  • 400
  • Published:
  • November 20, 2014
  • Dimensions:
  • 251x179x32 mm.
  • Weight:
  • 1250 g.
Delivery: 2-4 weeks
Expected delivery: December 20, 2024
Extended return policy to January 30, 2025

Description of Fundamentals of Silicon Carbide Technology

A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001.

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