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Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
- Binding:
- Paperback
- Pages:
- 204
- Published:
- July 31, 2018
- Dimensions:
- 148x210x11 mm.
Delivery:
1-2 weeks
Expected delivery: January 5, 2025
Description of Heavily n-type doped silicon and the dislocation formation during its growth by the Czochralski method.
The growth of heavily n-type doped silicon by the Czochralski method is frequently accompanied by the formation of dislocations. These dislocations lead to a reduction of yield and have therefore to be prevented. In this dissertation the reason for the formation of the dislocations is analyzed in detail.
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