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Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
part of the Springer Theses series
- Binding:
- Paperback
- Pages:
- 137
- Published:
- January 29, 2019
- Edition:
- 12018
- Dimensions:
- 155x235x0 mm.
- Weight:
- 454 g.
Delivery:
1-2 weeks
Expected delivery: December 7, 2024
Description of Research on Chemical Mechanical Polishing Mechanism of Novel Diffusion Barrier Ru for Cu Interconnect
This thesis addresses selected unsolved problems in the chemical mechanical polishing process (CMP) for integrated circuits using ruthenium (Ru) as a novel barrier layer material.
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