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Research on the Radiation Effects and Compact Model of SiGe HBT
part of the Springer Theses series
- Binding:
- Paperback
- Pages:
- 168
- Published:
- January 3, 2019
- Edition:
- 12018
- Weight:
- 302 g.
Delivery:
1-2 weeks
Expected delivery: December 13, 2024
Extended return policy to January 30, 2025
Description of Research on the Radiation Effects and Compact Model of SiGe HBT
This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs).
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