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Strain-Induced Effects in Advanced MOSFETs
part of the Computational Microelectronics series
- Binding:
- Paperback
- Pages:
- 252
- Published:
- August 22, 2016
- Edition:
- 12011
- Dimensions:
- 168x240x0 mm.
- Weight:
- 459 g.
Delivery:
1-2 weeks
Expected delivery: January 1, 2025
Extended return policy to January 30, 2025
Description of Strain-Induced Effects in Advanced MOSFETs
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
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