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Strained-Si Heterostructure Field Effect Devices
- Binding:
- Hardback
- Pages:
- 436
- Published:
- January 10, 2007
- Dimensions:
- 156x234x28 mm.
- Weight:
- 735 g.
Delivery:
2-4 weeks
Expected delivery: December 19, 2024
Description of Strained-Si Heterostructure Field Effect Devices
Brings together materials science, manufacturing processes, and research and developments of SiGe and strained-Si. This book contains the information on strain engineering in silicon CMOS and strained-Si-based integrated circuit technology and strain-engineered MOSFETs. It presents various aspects of silicon heterostructure materials and devices.
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