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Stress and Strain Engineering at Nanoscale in Semiconductor Devices

About Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Based on 3D process and device simulations with mechanical stress simulations by finite element techniques, this book explains performance assessment of nanoscale devices with strained SiGe and other stressors. It explains the process-induced stress transfer and developments at 7nm technology and below node in the area of strain-engineered devices.

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  • Language:
  • English
  • ISBN:
  • 9780367519292
  • Binding:
  • Hardback
  • Pages:
  • 260
  • Published:
  • June 29, 2021
  • Dimensions:
  • 241x161x22 mm.
  • Weight:
  • 560 g.
Delivery: 2-3 weeks
Expected delivery: December 12, 2024

Description of Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Based on 3D process and device simulations with mechanical stress simulations by finite element techniques, this book explains performance assessment of nanoscale devices with strained SiGe and other stressors. It explains the process-induced stress transfer and developments at 7nm technology and below node in the area of strain-engineered devices.

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