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Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
part of the Springer Theses series
- Binding:
- Paperback
- Pages:
- 164
- Published:
- May 17, 2018
- Edition:
- 12017
- Dimensions:
- 155x235x0 mm.
- Weight:
- 2934 g.
Delivery:
1-2 weeks
Expected delivery: December 13, 2024
Extended return policy to January 30, 2025
Description of Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets
This thesis describes the fabrication of metal-insulator-semiconductor (MIS) structures using very high permittivity dielectrics (based on rare earths) grown by high-pressure sputtering from metallic targets.
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